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Central Semiconductor CXDM1002N TR
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CXDM1002N TR
Manufacturers: Central Semiconductor
Qty: 1000
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Description: MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:2 A
Rds On - Drain-Source Resistance:140 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.1 V
Qg - Gate Charge:6 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.2 W
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Packaging:Reel
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